生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
其他特性: | BUILT IN BIAS RESISTANCE RATIO IS 10 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 80 | JESD-30 代码: | R-PDSO-F6 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN AND PNP |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN4986FE(TPL3,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP |
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RN4986FS(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors 4.7K x 47Kohms Polarity=NPN+PNP |
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RN4987 | TOSHIBA |
获取价格 |
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) |
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RN4987(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, |
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RN4987(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP |
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RN4987AFS | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
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RN4987FE | TOSHIBA |
获取价格 |
TOSHIBA Transistor Silicon NPN·PNP Epitaxial |
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RN4987FE(TE85L) | TOSHIBA |
获取价格 |
RN4987FE(TE85L) |
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RN4987FE(TPL3,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR |
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RN4987FS | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
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