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RN4982 PDF预览

RN4982

更新时间: 2024-01-26 05:54:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
6页 153K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN4982 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Lifetime Buy包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.47其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.08 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.05 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

RN4982 数据手册

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RN4982  
TOSHIBA Transistor  
Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)  
RN4982  
Switching, Inverter Circuit, Interface Circuit  
Unit: mm  
And Driver Circuit Applications  
l Includeing two devices in US6 (ultra super mini type with 6 leads)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
R1: 10k  
R2: 10kΩ  
(Q1, Q2 Common)  
Q1 Maximum Ratings (Ta = 25°C)  
JEDEC  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
EIAJ  
V
50  
50  
V
V
TOSHIBA  
Weight: 6.8mg  
2-2J1A  
CBO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
CEO  
EBO  
V
10  
V
I
100  
mA  
C
Q2 Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
10  
V
I
100  
mA  
C
1
2001-06-07  

RN4982 替代型号

型号 品牌 替代类型 描述 数据表
IMD10AT108 ROHM

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