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IMD10AT108 PDF预览

IMD10AT108

更新时间: 2024-01-23 08:26:44
品牌 Logo 应用领域
罗姆 - ROHM 开关光电二极管晶体管
页数 文件大小 规格书
3页 974K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SMT6, 6 PIN

IMD10AT108 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-74
包装说明:SMALL OUTLINE, R-PDSO-G6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75Factory Lead Time:13 weeks
风险等级:1.74其他特性:BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G6JESD-609代码:e1
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN AND PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signals
表面贴装:YES端子面层:TIN SILVER COPPER
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

IMD10AT108 数据手册

 浏览型号IMD10AT108的Datasheet PDF文件第2页浏览型号IMD10AT108的Datasheet PDF文件第3页 
IMD10A  
Power management (dual digital transistors)  
Datasheet  
Features  
Dimensions (Unit : mm)  
1) Two digital class transistors in a SMT package.  
2) Up to 500mA can be driven.  
3) Low VCE(sat) of drive transistors for low power dissipation.  
(4) (5) (6)  
Package, marking, and packaging specifications  
Part No.  
IMD10A  
Package  
Marking  
SMT6  
D10  
(3) (2)  
(1)  
SOT-457  
ROHM : SMT6  
EIAJ : SC-74  
Code  
T108  
3000  
Basic ordering unit (pieces)  
Each lead has same dimensions  
Absolute maximum ratings (Ta=25C)  
(4)  
(5)  
(6)  
R2  
R1  
DTr1  
DTr2  
(3)  
R1  
(2)  
(1)  
Equivalent circuit  
DTr  
1
Parameter  
Symbol  
Limits  
50  
5 to +5  
500  
Unit  
V
Supply voltage  
Input voltage  
VCC  
VIN  
V
Collector current  
I
C
mA  
DTr  
2
Parameter  
Symbol  
Limits  
50  
Unit  
V
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
50  
V
5
V
I
C
100  
mA  
Total  
Limits  
300(TOTAL)  
150  
Unit  
mW  
°C  
Parameter  
Power dissipation  
Symbol  
Pd  
Junction temperature  
Storage temperature  
Tj  
55 to +150  
°C  
Tstg  
200mW per element must not be exceeded.  
www.rohm.com  
1/  
2
c
2013 ROHM Co., Ltd. All rights reserved.  
2013.11 - Rev.C  

IMD10AT108 替代型号

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IMD6AT108 ROHM

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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon,
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