Datasheet > RN4911FE(TPL3,F)

RN4911FE(TPL3,F)

更新时间： 2024-10-02 20:55:11

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
6页	279K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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RN4911FE(TPL3,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	120	元件数量：	2
极性/信道类型：	NPN/PNP	最大功率耗散 (Abs)：	0.1 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN4911FE

TOSHIBA Transistor Silicon PNP·NPN Epitaxial Type

(PCT Process) (Bias Resistor Built-in Transistor)

RN4911FE

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

Equivalent Circuit and Bias Resistor Values

JEDEC

JEITA

―

TOSHIBA

2-2N1G

R1: 10 kΩ

Weight: 0003 g (typ.)

(Q1, Q2 common)

Marking

Equivalent Circuit (top view)

V M

2007-11-01

12 3 4 5 6

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