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RN4905TE85N PDF预览

RN4905TE85N

更新时间: 2024-11-16 21:06:51
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 247K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN4905TE85N 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.77
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.0468最大集电极电流 (IC):0.1 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN AND PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.3 V
Base Number Matches:1

RN4905TE85N 数据手册

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RN4905  
TOSHIBA Transistor  
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)  
RN4905  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z Including two devices in US6 (ultra super mini type with 6 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
R1: 2.2k  
R2: 47kΩ  
(Q1, Q2 Common)  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
JEDEC  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
JEITA  
TOSHIBA  
2-2J1A  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5  
V
V
Weight: 6.8mg (typ.)  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
Q2 Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
1
2007-11-01  

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