Datasheet > RN4908(TE85R)

RN4908(TE85R)

更新时间： 2024-02-14 03:16:25

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东芝 - TOSHIBA		/
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中文翻译

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数据手册

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RN4908(TE85R) 数据手册

RN4908

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

RN4908

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

Unit: mm

z Including two devices in US6 (ultra super mini type with 6 leads)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

Equivalent Circuit and Bias Resister Values

R1: 22kΩ

R2: 47kΩ

(Q1, Q2 Common)

Q1 Absolute Maximum Ratings (Ta = 25°C)

JEDEC

―

JEITA

Characteristic

Collector-base voltage

Symbol

Rating

Unit

TOSHIBA

2-2J1A

Weight: 6.8mg (typ.)

CBO

CEO

EBO

−50

−7

Collector-emitter voltage

Emitter-base voltage

Collector current

−100

Q2 Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

2007-11-01

12 3 4 5

中文翻译

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