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RN4906(TE85R) PDF预览

RN4906(TE85R)

更新时间: 2024-11-16 20:00:03
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
5页 243K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1A, 6 PIN, BIP General Purpose Small Signal

RN4906(TE85R) 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.77其他特性:BUILT-IN BIAS RESISTOR RATIO IS 0.1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN AND PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

RN4906(TE85R) 数据手册

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RN4906  
TOSHIBA Transistor  
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)  
RN4906  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z Including two devices in US6 (ultra super mini type with 6 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
Equivalent Circuit and Bias Resister Values  
R1: 4.7k  
R2: 47kΩ  
(Q1, Q2 Common)  
Q1 Absolute Maximum Ratings (Ta = 25°C)  
JEDEC  
JEITA  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
TOSHIBA  
2-2J1A  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5  
V
V
Weight: 6.8mg (typ.)  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
Q2 Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
5
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
100  
mA  
C
1
2007-11-01  

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