RN2911FS

更新时间： 2024-09-17 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号双极晶体管光电二极管驱动
页数	文件大小	规格书
6页	123K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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技术参数
数据手册

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RN2911FS 技术参数

生命周期：	Lifetime Buy	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	6	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.21.00.95
风险等级：	5.51	Is Samacsys：	N
其他特性：	BUILT-IN BIAS RESISTOR	最大集电极电流 (IC)：	0.05 A
集电极-发射极最大电压：	20 V	配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	300	JESD-30 代码：	R-PDSO-F6
JESD-609代码：	e0	元件数量：	2
端子数量：	6	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.05 W	认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

RN2911FS 数据手册

RN2910FS,RN2911FS

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)

RN2910FS, RN2911FS

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Unit: mm

1.0±0.05

0.8±0.05

0.1±0.05

•

Two devices are incorporated into a fine pitch small mold (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more

compact equipment and lowers assembly cost.

•

Complementary to RN1910FS and RN1911FS

Equivalent Circuit and Bias Resistor Values

(E1)

(B1)

(C2)

(E2)

(B2)

(C1)

1.EMIITTER1

2.BASE1

3.COLLECTOR2

4.EMITTER2

5.BASE2

fS6

6.COLLECTOR1

JEDEC

JEITA

―

Absolute Maximum Ratings (Ta = 25°C)

(Q1, Q2 common)

TOSHIBA

2-1F1D

Weight: 0.001 g (typ.)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

Equivalent Circuit

(top view)

CBO

CEO

EBO

−20

Collector-emitter voltage

Emitter-base voltage

−5

Collector current

−50

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

150

stg

−55~150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability

significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

12 3 4 5 6

中文翻译

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与RN2911FS相关器件

型号	品牌	获取价格	描述	数据表
RN2911FS(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),TSOP
RN2911TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2911TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2911TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN2912AFS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2912FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2913AFS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2913FS	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2961	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN2961(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 2-2J1B, 6 PIN,

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