Datasheet > RN2961FS(TPL3)

RN2961FS(TPL3)

更新时间： 2024-01-04 08:13:46

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	171K
描述
Digital Transistors -50mA -20volts 6Pin 4.7K x 4.7Kohms

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技术参数
数据手册

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RN2961FS(TPL3) 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.71
Is Samacsys：	N	Base Number Matches：	1

RN2961FS(TPL3) 数据手册

RN2961FS~RN2966FS

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2961FS,RN2962FS,RN2963FS

RN2964FS,RN2965FS,RN2966FS

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

Driver Circuit Applications

1.0±0.05

0.8±0.05

0.1±0.05

•

Two devices are incorporated into a fine pitch Small Mold (6 pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

•

Complementary to RN1961FS~RN1966FS

Equivalent Circuit and Bias Resistor Values

(E1)

1.EMIITTER1

2.EMITTER2

3.BASE2

4.COLLECTOR2

5.BASE1

(E2)

(B2)

(C2)

(B1)

(C1)

Type No.

R1 (kΩ)

R2 (kΩ)

RN2961FS

RN2962FS

RN2963FS

RN2964FS

RN2965FS

RN2966FS

4.7

fS6 6.COLLECTOR1

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-1F1C

Weight: 0.001 g (typ.)

Equivalent Circuit

(top view)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−20

CBO

CEO

RN2961FS~2966FS

Collector-emitter voltage

Emitter-base voltage

RN2961FS~2964FS

RN2965FS, 2966FS

−10

EBO

−5

Collector current

−50

°C

Collector power dissipation

Junction temperature

Storage temperature range

(Note 1)

RN2961FS~2966FS

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Total rating

2007-11-01

12 3 4 5 6 7 8

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