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RN2963(TE85L,F) PDF预览

RN2963(TE85L,F)

更新时间: 2024-02-24 00:33:12
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
7页 489K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363

RN2963(TE85L,F) 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.78最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):30元件数量:2
极性/信道类型:PNP最大功率耗散 (Abs):0.2 W
子类别:BIP General Purpose Small Signal表面贴装:YES
晶体管元件材料:SILICONBase Number Matches:1

RN2963(TE85L,F) 数据手册

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RN2961~RN2966  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)  
RN2961, RN2962, RN2963  
RN2964, RN2965, RN2966  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z Including two devices in US6 (ultra super mini type with 6 leads)  
z With built-in bias resistors  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Complementary to RN1961 to RN1966  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2961  
RN2962  
RN2963  
RN2964  
RN2965  
RN2966  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
US6  
47  
JEDEC  
2.2  
4.7  
JEITA  
TOSHIBA  
2-2J1B  
Weight: 6.8mg (typ.)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)  
Equivalent Circuit  
(Top View)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN2961 to 2966  
Collector-emitter voltage  
RN2961 to 2964  
RN2965, 2966  
10  
Emitter-base voltage  
V
V
EBO  
5  
Collector current  
I
100  
200  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
RN2961 to 2966  
T
150  
j
T
stg  
55 to 150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*: Total rating  
Start of commercial production  
1998-02  
1
2014-03-01  

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