生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G6 |
针数: | 6 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.71 | Is Samacsys: | N |
其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 1 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | R-PDSO-G6 |
元件数量: | 2 | 端子数量: | 6 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN2961-71 | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, US6, 6 PIN, BIP Gene | |
RN2961CT | TOSHIBA |
获取价格 |
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver | |
RN2961CT(TE85L) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),LLCC | |
RN2961FE | TOSHIBA |
获取价格 |
Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) | |
RN2961FE(TE85L,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR | |
RN2961FE(TPL3,F) | TOSHIBA |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SOT-363VAR | |
RN2961FS | TOSHIBA |
获取价格 |
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications | |
RN2961FS(TPL3) | TOSHIBA |
获取价格 |
Digital Transistors -50mA -20volts 6Pin 4.7K x 4.7Kohms | |
RN2961TE85L | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose | |
RN2961TE85N | TOSHIBA |
获取价格 |
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose |