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RN2304 PDF预览

RN2304

更新时间: 2024-11-01 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
7页 262K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2304 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SC-70包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.51其他特性:BUILT IN BIAS RESISTANCE RATIO IS 1
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):80
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.1 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

RN2304 数据手册

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RN2301~RN2306  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2301,RN2302,RN2303  
RN2304,RN2305,RN2306  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1301~1306  
Equivalent Circuit  
Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2301  
RN2302  
RN2303  
RN2304  
RN2305  
RN2306  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
EIAJ  
SC-70  
2-2E1A  
TOSHIBA  
Weight: 0.006g  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
50  
50  
V
V
CBO  
CEO  
RN2301~2306  
Collector-emitter voltage  
RN2301~2304  
RN2305, 2306  
10  
Emitter-base voltage  
V
V
EBO  
5  
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN2301~2306  
T
150  
j
T
55~150  
°C  
stg  
1
2001-06-07  

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