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RN2301 PDF预览

RN2301

更新时间: 2024-11-01 22:29:31
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
7页 262K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2301 数据手册

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RN2301~RN2306  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2301,RN2302,RN2303  
RN2304,RN2305,RN2306  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1301~1306  
Equivalent Circuit  
Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2301  
RN2302  
RN2303  
RN2304  
RN2305  
RN2306  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
EIAJ  
SC-70  
2-2E1A  
TOSHIBA  
Weight: 0.006g  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
50  
50  
V
V
CBO  
CEO  
RN2301~2306  
Collector-emitter voltage  
RN2301~2304  
RN2305, 2306  
10  
Emitter-base voltage  
V
V
EBO  
5  
Collector current  
I
100  
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN2301~2306  
T
150  
j
T
55~150  
°C  
stg  
1
2001-06-07  

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