Datasheet > RN2301(T5LUSN,F)

RN2301(T5LUSN,F)

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
7页	455K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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数据手册

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RN2301(T5LUSN,F) 数据手册

RN2301~RN2306

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2301, RN2302, RN2303

RN2304, RN2305, RN2306

Unit: mm

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Complementary to RN1301 to RN1306

Equivalent Circuit

Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2301

RN2302

RN2303

RN2304

RN2305

RN2306

4.7

USM

2.2

4.7

JEDEC

―

JEITA

SC-70

2-2E1A

TOSHIBA

Weight: 0.006g

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

RN2301 to RN2306

Collector-emitter voltage

−50

CBO

CEO

RN2301 to RN2304

Emitter-base voltage

−10

EBO

RN2305, RN2306

−5

Collector current

−100

100

°C

Collector power dissipation

RN2301 to RN2306

Junction temperature

150

Storage temperature range

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1987-09

2014-03-01

12 3 4 5 6 7

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