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RN2223 PDF预览

RN2223

更新时间: 2024-11-19 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
7页 331K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN2223 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.8其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):70
JESD-30 代码:R-PSIP-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

RN2223 数据手册

 浏览型号RN2223的Datasheet PDF文件第2页浏览型号RN2223的Datasheet PDF文件第3页浏览型号RN2223的Datasheet PDF文件第4页浏览型号RN2223的Datasheet PDF文件第5页浏览型号RN2223的Datasheet PDF文件第6页浏览型号RN2223的Datasheet PDF文件第7页 
                                                               
                                                               
RN2221~RN2227  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2221,RN2222,RN2223  
RN2224,RN2225,RN2226,RN2227  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l High current type (I  
= 800mA)  
C(MAX)  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Low V  
CE (sat)  
l Complementary to RN1221~RN1227  
Equivalent Circuit  
Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN2221  
RN2222  
RN2223  
RN2224  
RN2225  
RN2226  
RN2227  
1
2.2  
4.7  
10  
1
2.2  
4.7  
10  
10  
10  
10  
JEDEC  
EIAJ  
0.47  
1
TOSHIBA  
Weight: 0.13g  
2-4E1A  
2.2  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
V
V
50  
50  
V
V
CBO  
CEO  
RN2221~2227  
Collector-emitter voltage  
RN2221~2224  
RN2225, 2226  
RN2227  
10  
Emitter-base voltage  
V
V
5  
EBO  
6  
Collector current  
I
800  
300  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN2221~2227  
T
150  
j
T
55~150  
°C  
stg  
1
2001-06-07  

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