Datasheet > RN2223(TPE4,F)

RN2223(TPE4,F)

更新时间： 2024-11-20 20:58:19

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东芝 - TOSHIBA		/
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描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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RN2223(TPE4,F) 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
Base Number Matches：	1

RN2223(TPE4,F) 数据手册

RN2221~RN2227

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2221,RN2222,RN2223

RN2224,RN2225,RN2226,RN2227

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z High current type (I

= −800mA)

C(MAX)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Low V

CE (sat)

z Complementary to RN1221~RN1227

Equivalent Circuit

Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2221

RN2222

RN2223

RN2224

RN2225

RN2226

RN2227

2.2

4.7

2.2

4.7

JEDEC

―

JEITA

TOSHIBA

Weight: 0.13g (typ.)

2-4E1A

0.47

2.2

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2221~2227

Collector-emitter voltage

RN2221~2224

RN2225, 2226

RN2227

−10

Emitter-base voltage

−5

EBO

−6

Collector current

−800

300

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2221~2227

150

stg

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7

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