RN2209

更新时间： 2024-11-01 22:43:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
5页	166K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

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中文翻译

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数据手册

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RN2209 数据手册

RN2207~RN2209

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2207,RN2208,RN2209

Unit: mm

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1207~RN1209

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2207

RN2208

RN2209

JEDEC

EIAJ

―

TOSHIBA

Weight: 0.13g

2-4E1A

Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

Collector-emitter voltage

RN2207

RN2208

RN2209

−6

Emitter-base voltage

−7

EBO

−15

Collector current

−100

300

°C

Collector power dissipation

Junction temperature

Storage temperature range

150

−55~150

°C

stg

2001-06-07

12 3 4 5

中文翻译

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与RN2209相关器件

型号	品牌	获取价格	描述	数据表
RN2209(TPE4)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp
RN2210	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2210(TPE4)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp
RN2211	TOSHIBA	获取价格	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2211(TPE4)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp
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RN222-0.6-02-47M	Schaffner	获取价格	Current-compensated Chokes
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