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RN2210 PDF预览

RN2210

更新时间: 2024-11-01 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
5页 160K
描述
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2210 技术参数

生命周期:Lifetime Buy包装说明:CYLINDRICAL, O-XBCY-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.55其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):120
JESD-30 代码:O-XBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

RN2210 数据手册

 浏览型号RN2210的Datasheet PDF文件第2页浏览型号RN2210的Datasheet PDF文件第3页浏览型号RN2210的Datasheet PDF文件第4页浏览型号RN2210的Datasheet PDF文件第5页 
                                                               
                                                               
RN2210,RN2211  
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)  
RN2210,RN2211  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN1210, 1211  
Equivalent Circuit  
JEDEC  
EIAJ  
Maximum Ratings (Ta = 25°C)  
TOSHIBA  
Weight: 0.13g  
2-4E1A  
Characterisstic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
50  
50  
V
V
Collector-emitter voltage  
Emitter-base voltage  
5  
V
Collector current  
I
100  
300  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
T
150  
j
T
55~150  
stg  
1
2001-06-07  

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Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications