Datasheet > RN2102(T5L,PP,F)

RN2102(T5L,PP,F)

更新时间： 2024-11-17 07:48:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	573K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon

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RN2102(T5L,PP,F) 数据手册

RN2101∼RN2106

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN2101, RN2102, RN2103

RN2104, RN2105, RN2106

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Built-in bias resistors

z Simplified circuit design

z Fewer parts and simplified manufacturing process

z Complementary to RN1101 to RN1106

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2101

RN2102

RN2103

RN2104

RN2105

RN2106

4.7

SSM

2.2

4.7

JEDEC

―

JEITA

TOSHIBA

2-2H1A

Weight: 2.4 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

−50

CBO

CEO

RN2101 to 2106

Collector-emitter voltage

RN2101 to 2104

RN2105, 2106

−10

Emitter-base voltage

EBO

−5

Collector current

−100

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN2101 to 2106

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1990-12

2014-03-01

12 3 4 5 6 7 8

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