RN2102ACT

更新时间： 2024-09-24 12:23:03

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号双极晶体管驱动
页数	文件大小	规格书
8页	196K
描述
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

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中文翻译

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技术参数
数据手册

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RN2102ACT 技术参数

生命周期：	Lifetime Buy	包装说明：	CHIP CARRIER, R-XBCC-N3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.69
Is Samacsys：	N	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	0.08 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	50	JESD-30 代码：	R-XBCC-N3
元件数量：	1	端子数量：	3
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

RN2102ACT 数据手册

RN2101ACT ~ RN2106ACT

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2101ACT,RN2102ACT,RN2103ACT

RN2104ACT,RN2105ACT,RN2106ACT

Switching, Inverter Circuit, Interface Circuit and

Unit: mm

0.6±0.05

Driver Circuit Applications

0.5±0.03

•

Extra small package (CST3) is applicable for extra high density

fabrication.

３

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

１

２

•

Complementary to RN1101ACT to RN1106ACT

0.05±0.03

0.35±0.02

0.15±0.03

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN2101ACT

RN2102ACT

RN2103ACT

RN2104ACT

RN2105ACT

RN2106ACT

4.7

1.BASE

CST3

2.EMITTER

3.COLLECOTR

JEDEC

JEITA

―

2.2

4.7

TOSHIBA

2-1J1A

Weight: 0.75 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

−50

CBO

CEO

RN2101ACT to 2106ACT

Collector-emitter voltage

RN2101ACT to 2104ACT

Emitter-base voltage

−10

EBO

RN2105ACT, 2106ACT

−5

Collector current

−80

°C

Collector power dissipation

RN2101ACT to 2106ACT

Junction temperature

100*

150

Storage temperature range

stg

−55 to 150

°C

* : Mounted on FR4 board (10 mm × 10 mm × 1 mmt)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-04-17

12 3 4 5 6 7 8

中文翻译

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与RN2102ACT相关器件

型号	品牌	获取价格	描述	数据表
RN2102ACT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,80MA I(C),SMT
RN2102CT	TOSHIBA	获取价格	Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver
RN2102CT(TPL3)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,20V V(BR)CEO,50MA I(C),SOT-883
RN2102F	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2HA1A, 3 PIN, BIP General Pur
RN2102FS	TOSHIBA	获取价格	TRANSISTOR 50 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-1E1A, FSM, 3 PIN, BIP General
RN2102FT	TOSHIBA	获取价格	暂无描述
RN2102MFV	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
RN2102MFV(TL3MAA)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2102MFV(TL3PAV)	TOSHIBA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
RN2102MFV,L3F(T	TOSHIBA	获取价格	Small Signal Bipolar Transistor

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