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RN1601TE85N PDF预览

RN1601TE85N

更新时间: 2024-11-23 14:38:27
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
7页 469K
描述
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal

RN1601TE85N 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.73
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):30
JESD-30 代码:R-PDSO-G6元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzVCEsat-Max:0.3 V
Base Number Matches:1

RN1601TE85N 数据手册

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RN1601~RN1606  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)  
RN1601, RN1602, RN1603  
RN1604, RN1605, RN1606  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
z Including two devices in SM6 (super-mini-type with six (6) leads)  
z With built-in bias resistors  
z Simplified circuit design  
z Reduced number of parts and manufacturing process  
z Complementary to RN2601 to RN2606  
Equivalent Circuit and Bias Resistor Values  
Type No.  
R1 (k)  
R2 (k)  
RN1601  
RN1602  
RN1603  
RN1604  
RN1605  
RN1606  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
SM6  
47  
JEDEC  
2.2  
4.7  
JEITA  
TOSHIBA  
Weight: 15mg (typ.)  
2-3N1A  
Equivalent Circuit  
(Top View)  
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1601 to 1606  
Collector-emitter voltage  
RN1601 to 1604  
RN1605, 1606  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
C
300  
RN1601 to 1606  
T
150  
j
T
stg  
55 to150  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
*Total rating  
2010-05-19  
1

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