Datasheet > RN1602(TE85L,F)

RN1602(TE85L,F)

更新时间： 2024-11-19 19:47:27

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体管
页数	文件大小	规格书
7页	510K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP

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中文翻译

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技术参数
数据手册

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RN1602(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.77	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	50	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.3 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

RN1602(TE85L,F) 数据手册

RN1601~RN1606

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1601, RN1602, RN1603

RN1604, RN1605, RN1606

Unit: mm

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

z Including two devices in SM6 (super-mini-type with six (6) leads)

z With built-in bias resistors

z Simplified circuit design

z Reduced number of parts and manufacturing process

z Complementary to RN2601 to RN2606

Equivalent Circuit and Bias Resistor Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1601

RN1602

RN1603

RN1604

RN1605

RN1606

4.7

SM6

JEDEC

―

2.2

4.7

JEITA

TOSHIBA

Weight: 15mg (typ.)

2-3N1A

Equivalent Circuit

(Top View)

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1601 to 1606

Collector-emitter voltage

RN1601 to 1604

RN1605, 1606

Emitter-base voltage

EBO

Collector current

100

°C

Collector power dissipation

Junction temperature

Storage temperature range

P *

300

RN1601 to 1606

150

stg

−55 to150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

*Total rating

Start of commercial production

1988-11

2014-03-01

12 3 4 5 6 7

中文翻译

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与RN1602(TE85L,F)相关器件

型号	品牌	获取价格	描述	数据表
RN1602TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1603	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1603(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
RN1603TE85L	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1603TE85N	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose
RN1604	TOSHIBA	获取价格	Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1604(TE85L)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
RN1604(TE85L,F)	TOSHIBA	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),TSOP
RN1604(TE85R)	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,
RN1604TE85R	TOSHIBA	获取价格	TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose

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