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RN152GT2R PDF预览

RN152GT2R

更新时间: 2024-11-23 21:05:43
品牌 Logo 应用领域
罗姆 - ROHM 测试二极管
页数 文件大小 规格书
3页 129K
描述
Pin Diode, 30V V(BR),

RN152GT2R 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.82最小击穿电压:30 V
标称二极管电容:0.45 pF最大二极管正向电阻:4.8 Ω
二极管电阻测试电流:1 mA二极管电阻测试频率:100 MHz
二极管类型:PIN DIODE最高工作温度:150 °C
反向测试电压:1 V子类别:PIN Diodes
表面贴装:YESBase Number Matches:1

RN152GT2R 数据手册

 浏览型号RN152GT2R的Datasheet PDF文件第2页浏览型号RN152GT2R的Datasheet PDF文件第3页 
RN152G  
Diodes  
PIN diode (Silicon Epitaxial Planer)  
RN152G  
z Land size figure (Unit : mm)  
z External dimensions (Unit : mm)  
z Applications  
High frequency switching  
0.5  
0.13±0.03  
0.6±0.05  
z Features  
1) Ultra small mold type. (VMD2)  
2) High frequency resistance which  
is small and low capacity.  
VMD2  
z Structure  
z Construction  
Silicon epitaxial planar  
0.27±0.03  
0.5±0.05  
ROHM : VMD2  
dot (year week factory)  
z Taping dimensions (Unit : mm)  
0.18±0.05  
φ1.5+0.1  
ꢀꢀꢀꢀꢀ0  
2±0.05  
4±0.1  
φ0.5  
0.3  
0.65±0.05  
4±0.1  
2±0.05  
0.76±0.1  
z Absolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
30  
Symbol  
Unit  
Reverse voltage  
VR  
V
mA  
Forward current  
IF  
100  
150  
Junction temperature  
Storage temperature  
Operation temperature  
Tj  
-55 to +150  
-55 to +150  
Tstg  
Topor  
z Electrical characteristic (Ta=25°C)  
Parameter  
Conditions  
Symbol  
Min.  
Typ.  
Max.  
1
Unit  
V
Forward voltage  
VF  
IR  
-
-
-
-
-
-
IF=10mA  
Reverse current  
-
0.1  
0.45  
4.8  
1.8  
µA  
pF  
Ω
VR=30V  
Capacitance between terminals  
Ct  
0.15  
VR=1V , f=1MHz  
IF=1mA,f=100MHz  
IF=10mA,f=100MHz  
-
-
Forward frequency resistance  
Rf  
Ω
Rev.B  
1/2  

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