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RN1544-B PDF预览

RN1544-B

更新时间： 2024-11-19 21:09:07
品牌 Logo 应用领域
东芝 - TOSHIBA 开关光电二极管晶体管
页数 文件大小 规格书
4页 258K
描述
TRANSISTOR 300 mA, 20 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3L1A, SMV, 5 PIN, BIP General Purpose Small Signal

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中文翻译

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RN1544-B 技术参数

生命周期：End Of Life包装说明：SMALL OUTLINE, R-PDSO-G5
针数：5Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.21.00.95
风险等级：5.5最大集电极电流 (IC)：0.3 A
集电极-发射极最大电压：20 V配置：COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：200JESD-30 代码：R-PDSO-G5
JESD-609代码：e0元件数量：2
端子数量：5最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
最大功率耗散 (Abs)：0.3 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：30 MHz
Base Number Matches：1

RN1544-B 数据手册

 浏览型号RN1544-B的Datasheet PDF文件第2页浏览型号RN1544-B的Datasheet PDF文件第3页浏览型号RN1544-B的Datasheet PDF文件第4页 
RN1544  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)  
RN1544  
For use in Muting and Switching Applications  
Unit: mm  
•
•
Emitter-base voltage is high: V  
= 25 V (max)  
EBO  
Incorporating a bias resistor into a transistor reduces parts count.  
Reducing the parts count enable the manufacture of ever more  
compact equipment and save assembly cost.  
Equivalent Circuit  
C
h
FE  
A
B
classification  
Marking  
44A  
44B  
R1  
B
E
SMV  
Absolute Maximum Ratings (Ta = 25°C)  
(Q1, Q2 common)  
JEDEC  
JEITA  
―
―
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
TOSHIBA  
2-3L1A  
V
CBO  
V
CEO  
V
EBO  
50  
20  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Weight: 0.014g (typ.)  
25  
V
Collector current  
I
300  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
(Note1)  
300  
C
Equivalent Circuit  
(top view)  
T
150  
j
T
stg  
−55~150  
5
4
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.)  
may cause this product to decrease in the reliability significantly even if the  
operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Q1  
Q2  
Please design the appropriate reliability upon reviewing the Toshiba  
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2
3
Note1: Total rating  
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)  
Characteristics  
Symbol  
Test Condition  
= 50 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
I
V
V
⎯
⎯
⎯
⎯
⎯
⎯
30  
⎯
2.2  
100  
100  
1200  
0.1  
nA  
nA  
CBO  
CB  
EB  
E
I
= 25 V, I = 0  
C
EBO  
h
(Note2) V = 2 V, I = 4 mA  
CE  
200  
⎯
FE  
C
Collector-emitter saturation voltage  
Transition frequency  
V
I
= 10 mA, I = 1 mA  
V
MHz  
pF  
CE (sat)  
C
B
f
V
V
= 6 V, I = 4 mA  
⎯
⎯
T
CE  
CB  
C
Collector output capacitance  
Input resistor  
C
= 10 V, I = 0, f = 1 MHz  
⎯
7
ob  
E
R1  
⎯
1.54  
2.86  
kΩ  
Note2:  
hFE classification  
A: 200~700, B: 350~1200  
1
2007-11-21  
1234

中文翻译

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