Datasheet > RN1421_07

RN1421_07

更新时间： 2024-11-21 04:07:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动 PC
页数	文件大小	规格书
8页	548K
描述
Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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数据手册

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RN1421_07 数据手册

RN1421∼RN1427

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1421,RN1422,RN1423,RN1424

RN1425,RN1426,RN1427

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit: mm

z High current type (I (max) = 800mA)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Low V

(sat)

z Complementary to RN2401~RN2406

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1421

RN1422

RN1423

RN1424

RN1425

RN1426

RN1427

2.2

4.7

2.2

4.7

JEDEC

JEITA

―

0.47

SC-59

2-3F1A

TOSHIBA

2.2

Weight: 0.012 g (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1421~1427

Collector-emitter voltage

RN1421~1424

RN1425, 1426

RN1427

Emitter-base voltage

EBO

Collector current

800

200

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1421~1427

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7 8

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