Datasheet > RN1427(T5L,PP,F)

RN1427(T5L,PP,F)

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	552K
描述
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

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RN1427(T5L,PP,F) 数据手册

RN1421∼RN1427

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)

RN1421, RN1422, RN1423, RN1424

RN1425, RN1426, RN1427

Switching, Inverter Circuit, Interface Circuit

Unit: mm

and Driver Circuit Applications

z High current type (I (max) = 800mA)

z With built-in bias resistors

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Low V

(sat)

z Complementary to RN2421 to RN2427

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1421

RN1422

RN1423

RN1424

RN1425

RN1426

RN1427

2.2

4.7

2.2

4.7

S-Mini

JEDEC

JEITA

TO-236MOD

SC-59

0.47

TOSHIBA

2-3F1A

2.2

Weight: 12 mg (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1421 to 1427

Collector-emitter voltage

RN1421 to 1424

RN1425, 1426

RN1427

Emitter-base voltage

EBO

Collector current

800

°C

Collector power dissipation

Junction temperature

Storage temperature range

200

RN1421 to 1427

150

stg

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1988-03

2014-03-01

12 3 4 5 6 7 8

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