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RN1424 PDF预览

RN1424

更新时间: 2024-11-24 22:43:51
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体晶体管PC
页数 文件大小 规格书
8页 323K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1424 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.77其他特性:BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):90
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

RN1424 数据手册

 浏览型号RN1424的Datasheet PDF文件第2页浏览型号RN1424的Datasheet PDF文件第3页浏览型号RN1424的Datasheet PDF文件第4页浏览型号RN1424的Datasheet PDF文件第5页浏览型号RN1424的Datasheet PDF文件第6页浏览型号RN1424的Datasheet PDF文件第7页 
RN1421~RN1427  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1421,RN1422,RN1423,RN1424  
RN1425,RN1426,RN1427  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit: mm  
l High current type (I (max) = 800mA)  
C
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Low V  
CE  
(sat)  
l Complementary to RN2401~RN2406  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN1421  
RN1422  
RN1423  
RN1424  
RN1425  
RN1426  
RN1427  
1
2.2  
4.7  
10  
1
2.2  
4.7  
10  
10  
10  
10  
JEDEC  
JEITA  
0.47  
1
SC-59  
2-3F1A  
TOSHIBA  
2.2  
Weight: 0.012 g (typ.)  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1421~1427  
Collector-emitter voltage  
RN1421~1424  
RN1425, 1426  
RN1427  
10  
Emitter-base voltage  
V
V
5
EBO  
6
Collector current  
I
800  
200  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1421~1427  
T
j
T
°C  
stg  
1
2002-02-08  

RN1424 替代型号

型号 品牌 替代类型 描述 数据表
RN1423 TOSHIBA

完全替代

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
BCR148W INFINEON

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