是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT-23 | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.77 | 其他特性: | BUILT IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.8 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 90 |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 300 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
RN1423 | TOSHIBA |
完全替代 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | |
BCR148W | INFINEON |
功能相似 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir | |
BCW32LT1G | ONSEMI |
功能相似 |
General Purpose Transistors |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN1424(TE85L,F) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor | |
RN1424(TE85L2) | TOSHIBA |
获取价格 |
TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP Gener | |
RN142-4/02 | ETC |
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CHOKE 3.3MH 4A | |
RN142-4-02 | ETC |
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Current-compensated Chokes | |
RN142-4-02-3M3 | Schaffner |
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Current-compensated Chokes | |
RN1425 | TOSHIBA |
获取价格 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | |
RN1425(TE85L) | TOSHIBA |
获取价格 |
TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP Gener | |
RN1425(TE85L,F) | TOSHIBA |
获取价格 |
Small Signal Bipolar Transistor | |
RN1425(TE85L2) | TOSHIBA |
获取价格 |
暂无描述 | |
RN1425(TE85R) | TOSHIBA |
获取价格 |
TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-3F1A, SC-59, 3 PIN, BIP Gener |