Datasheet > RN1427

RN1427

更新时间： 2024-11-24 22:43:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
8页	323K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

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中文翻译

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数据手册

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RN1427 数据手册

RN1421~RN1427

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1421,RN1422,RN1423,RN1424

RN1425,RN1426,RN1427

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

Unit: mm

l High current type (I (max) = 800mA)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Low V

(sat)

l Complementary to RN2401~RN2406

Equivalent Circuit and Bias Resister Values

Type No.

R1 (kΩ)

R2 (kΩ)

RN1421

RN1422

RN1423

RN1424

RN1425

RN1426

RN1427

2.2

4.7

2.2

4.7

JEDEC

JEITA

―

0.47

SC-59

2-3F1A

TOSHIBA

2.2

Weight: 0.012 g (typ.)

Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1421~1427

Collector-emitter voltage

RN1421~1424

RN1425, 1426

RN1427

Emitter-base voltage

EBO

Collector current

800

200

150

−55~150ꢀ

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1421~1427

°C

stg

2002-02-08

12 3 4 5 6 7 8

中文翻译

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