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RN1221_07 PDF预览

RN1221_07

更新时间: 2024-09-15 04:07:47
品牌 Logo 应用领域
东芝 - TOSHIBA 开关驱动
页数 文件大小 规格书
8页 544K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

RN1221_07 数据手册

 浏览型号RN1221_07的Datasheet PDF文件第2页浏览型号RN1221_07的Datasheet PDF文件第3页浏览型号RN1221_07的Datasheet PDF文件第4页浏览型号RN1221_07的Datasheet PDF文件第5页浏览型号RN1221_07的Datasheet PDF文件第6页浏览型号RN1221_07的Datasheet PDF文件第7页 
RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1221,RN1222,RN1223,RN1224  
RN1225,RN1226,RN1227  
Unit: mm  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
z High current type (I  
= 800mA)  
C(MAX)  
z With built-in bias resistors.  
z Simplify circuit design  
z Reduce a quantity of parts and manufacturing process  
z Low  
VCE (sat)  
z Complementary to RN2221~2227  
Equivalent Circuit  
Type No.  
R1 (k)  
R2 (k)  
RN1221  
RN1222  
RN1223  
RN1224  
RN1225  
RN1226  
RN1227  
1
2.2  
4.7  
10  
1
2.2  
4.7  
10  
10  
10  
10  
JEDEC  
EIAJ  
0.47  
1
TOSHIBA  
Weight: 0.13g  
2-4E1A  
2.2  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1221~1227  
Collector-emitter voltage  
RN1221~1224  
RN1225, 1226  
RN1227  
10  
Emitter-base voltage  
V
V
5
EBO  
6
Collector current  
I
800  
300  
150  
55~150  
mA  
mW  
°C  
c
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
c
RN1221~1227  
T
j
T
stg  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  

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