Datasheet > RN1221_07

RN1221_07

更新时间： 2024-11-02 04:07:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关驱动
页数	文件大小	规格书
8页	544K
描述
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

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数据手册

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RN1221_07 数据手册

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1221,RN1222,RN1223,RN1224

RN1225,RN1226,RN1227

Unit: mm

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

z High current type (I

= 800mA)

C(MAX)

z With built-in bias resistors.

z Simplify circuit design

z Reduce a quantity of parts and manufacturing process

z Low

VCE (sat)

z Complementary to RN2221~2227

Equivalent Circuit

Type No.

R1 (kΩ)

R2 (kΩ)

RN1221

RN1222

RN1223

RN1224

RN1225

RN1226

RN1227

2.2

4.7

2.2

4.7

JEDEC

―

EIAJ

0.47

TOSHIBA

Weight: 0.13g

2-4E1A

2.2

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

RN1221~1227

Collector-emitter voltage

RN1221~1224

RN1225, 1226

RN1227

Emitter-base voltage

EBO

Collector current

800

300

150

−55~150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1221~1227

stg

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2007-11-01

12 3 4 5 6 7 8

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