Datasheet > RN1223

RN1223

更新时间： 2024-09-15 22:43:51

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管 PC
页数	文件大小	规格书
8页	311K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

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中文翻译

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数据手册

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RN1223 数据手册

RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1221,RN1222,RN1223,RN1224

RN1225,RN1226,RN1227

Unit: mm

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l High current type (I

= 800mA)

C(MAX)

l With built-in bias resistors.

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Low

VCE (sat)

l Complementary to RN2221~2227

Equivalent Circuit

Type No.

R1 (kΩ)

R2 (kΩ)

RN1221

RN1222

RN1223

RN1224

RN1225

RN1226

RN1227

2.2

4.7

2.2

4.7

JEDEC

―

EIAJ

0.47

TOSHIBA

Weight: 0.13g

2-4E1A

2.2

Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

CBO

CEO

RN1221~1227

Collector-emitter voltage

RN1221~1224

RN1225, 1226

RN1227

Emitter-base voltage

EBO

Collector current

800

300

150

°C

Collector power dissipation

Junction temperature

Storage temperature range

RN1221~1227

−55~150

°C

stg

2001-06-07

12 3 4 5 6 7 8

中文翻译

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与RN1223相关器件

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RN122-3/02	ETC	获取价格	DROSSEL NETZ PCB 4.5MH 3.0A
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RN1224	TOSHIBA	获取价格	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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RN122-4-02-	ETC	获取价格	Current-compensated Chokes
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