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RN1241B PDF预览

RN1241B

更新时间: 2024-09-16 20:11:27
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体管
页数 文件大小 规格书
3页 82K
描述
TRANSISTOR SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purpose Small Signal

RN1241B 技术参数

生命周期:Obsolete包装说明:2-4E1A, 3 PIN
针数:3Reach Compliance Code:unknown
风险等级:5.79最大集电极电流 (IC):0.3 A
最小直流电流增益 (hFE):350JESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管元件材料:SILICON
Base Number Matches:1

RN1241B 数据手册

 浏览型号RN1241B的Datasheet PDF文件第2页浏览型号RN1241B的Datasheet PDF文件第3页 
RN1241~RN1244  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1241,RN1242,RN1243,RN1244  
Unit: mm  
For Muting and Switching Applications  
l High emitter-base voltage  
: V  
= 25v (min)  
EBO  
l High reverse hfe  
: reverse h = 150 (typ.) (V  
FE CE  
= 2V, I = 4ma)  
C
l Low on resistance  
: R  
= 1(typ.) (I = 5mA)  
ON  
B
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
Equivalent Circuit  
JEDEC  
EIAJ  
TOSHIBA  
Weight: 0.13g  
2-4E1A  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
V
V
50  
20  
V
V
CBO  
CEO  
EBO  
25  
V
I
300  
mA  
mW  
°C  
°C  
c
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
300  
c
T
150  
j
T
55~150  
stg  
1
2001-06-07  

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