生命周期: | Obsolete | 包装说明: | 2-4E1A, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.79 | 最大集电极电流 (IC): | 0.3 A |
最小直流电流增益 (hFE): | 350 | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.3 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RN1241-B | TOSHIBA |
获取价格 |
TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp | |
RN1242 | TOSHIBA |
获取价格 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | |
RN1242(TPE4) | TOSHIBA |
获取价格 |
TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp | |
RN1242A | ETC |
获取价格 |
TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK | |
RN1242-A | TOSHIBA |
获取价格 |
TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp | |
RN1242B | ETC |
获取价格 |
TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK | |
RN1242-B | TOSHIBA |
获取价格 |
TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-4E1A, 3 PIN, BIP General Purp | |
RN1243 | TOSHIBA |
获取价格 |
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) | |
RN1243A | ETC |
获取价格 |
TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK | |
RN1243-A | TOSHIBA |
获取价格 |
暂无描述 |