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RN1005(TPE2,F) PDF预览

RN1005(TPE2,F)

更新时间: 2024-11-08 15:49:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 456K
描述
Small Signal Bipolar Transistor

RN1005(TPE2,F) 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.76
Base Number Matches:1

RN1005(TPE2,F) 数据手册

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RN1001RN1006  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1001,RN1002,RN1003  
RN1004,RN1005,RN1006  
Switching, Inverter Circuit, Interface Circuit  
and Driver Circuit Applications  
Unit: mm  
z
z
z
z
With built-in bias resistors  
Simplify circuit design  
Reduce a quantity of parts and manufacturing process  
Complementary to RN2001~RN2006  
Equivalent Circuit and Bias Resister Values  
Type No.  
R1 (k)  
R2 (k)  
RN1001  
RN1002  
RN1003  
RN1004  
RN1005  
RN1006  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
22  
47  
2.2  
4.7  
JEDEC  
TO-92  
SC-43  
JEITA  
TOSHIBA  
Weight: 0.21g (typ.)  
2-5F1B  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
50  
50  
V
V
CBO  
CEO  
RN1001~1006  
Collector-emitter voltage  
RN1001~1004  
RN1005, 1006  
10  
Emitter-base voltage  
V
V
EBO  
5
Collector current  
I
100  
400  
150  
55~150  
mA  
mW  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P
C
RN1001~1006  
T
j
T
stg  
°C  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
1
2007-11-01  

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