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RN1011 PDF预览

RN1011

更新时间: 2024-11-20 22:23:43
品牌 Logo 应用领域
东芝 - TOSHIBA 晶体小信号双极晶体管开关PC
页数 文件大小 规格书
4页 149K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

RN1011 技术参数

生命周期:Lifetime Buy零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.54
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

RN1011 数据手册

 浏览型号RN1011的Datasheet PDF文件第2页浏览型号RN1011的Datasheet PDF文件第3页浏览型号RN1011的Datasheet PDF文件第4页 
RN1010, RN1011  
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)  
RN1010,RN1011  
Switching, Inverter Circuit, Interface Circuit  
And Driver Circuit Applications  
Unit: mm  
l With built-in bias resistors  
l Simplify circuit design  
l Reduce a quantity of parts and manufacturing process  
l Complementary to RN2010~RN2011  
Equivalent Circuit  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
50  
50  
V
V
JEDEC  
TO-92  
SC-43  
2-5F1B  
CBO  
EIAJ  
V
CEO  
EBO  
TOSHIBA  
Weight: 0.21g  
V
5
V
I
100  
mA  
mW  
°C  
°C  
C
Collector power dissipation  
Junction temperature  
Storage temperature range  
P *  
400  
C
T
150  
j
T
55~125  
stg  
Electrical Characteristics (Ta = 25°C)  
Test  
Characteristic  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Circuit  
Collector cut-off current  
Emitter cut-off current  
I
I
V
V
V
= 50V, I = 0  
100  
100  
700  
0.3  
nA  
nA  
CBO  
CB  
EB  
CE  
E
= 5V, I = 0  
C
EBO  
DC current gain  
h
FE  
= 5V, I = 1mA  
120  
 
C
Collector-emitter saturation voltage  
Transition frequency  
V
ꢀ  
I
= 5mA, I = 0.25mA  
C B  
0.1  
250  
3
V
CE (sat)  
f
V
V
= 10V, I = 5mA  
MH  
T
CE  
C
z
Collector output capacitance  
C
= 10V, I = 0, f = 1MH  
z
3.29ꢀ  
7ꢀ  
6
pF  
ob  
CB  
E
RN1010  
Input resistor  
4.7  
10  
6.11  
13  
R1  
ꢀ  
kΩ  
RN1011  
1
2001-06-07  

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