Datasheet > RMWB11001

RMWB11001

更新时间： 2024-10-01 22:14:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		缓冲放大器
页数	文件大小	规格书
6页	356K
描述
11 GHz Buffer Amplifier MMIC

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技术参数
数据手册

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RMWB11001 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	DIE OR CHIP
Reach Compliance Code：	compliant	风险等级：	5.8
Base Number Matches：	1

RMWB11001 数据手册

June 2004

RMWB11001

11 GHz Buffer Amplifier MMIC

General Description

Features

The RMWB11001 is a 2-stage GaAs MMIC amplifier

designed as a 10.5 to 11.7 GHz Buffer Amplifier for use in

point to point and point to multi-point radios, and various

communications applications. In conjunction with other

Fairchild RF amplifiers, multipliers and mixers it forms part

of a complete 38 GHz transmit/receive chipset. The

RMWB11001 utilizes our 0.25µm power PHEMT process

and is sufficiently versatile to serve in a variety of medium

power amplifier applications.

• 4 mil substrate

• Small-signal gain 21dB (typ.)

• Saturated Power Out 19dBm (typ.)

• Voltage Detector Included to Monitor Pout

• Chip size 2.0mm x 1.3mm

Device

Absolute Ratings

Symbol

Parameter

Positive DC Voltage (+4V Typical)

Negative DC Voltage

Ratings

Units

-2

Vdg

Simultaneous (Vd–Vg)

Positive DC Current

104

dBm

°C

RF Input Power (from 50Ω source)

Operating Baseplate Temperature

Storage Temperature Range

Thermal Resistance (Channel to Backside)

-30 to +85

-55 to +125

180

°C

STG

°C/W

RMWB11001 Rev. C

12 3 4 5 6

中文翻译

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