RMWL38001
37-40 GHz Low Noise Amplifier MMIC
PRODUCT INFORMATION
Description
Features
The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz
transmit/receive chipset. The RMWL38001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently
versatile to serve in a variety of low noise amplifier applications.
ꢀ 4 mil substrate
ꢀ Noise figure 2.7 dB (typ.)
ꢀ Small-signal gain 22 dB (typ.)
ꢀ 1dB compressed Pout 13.5 dBm (typ.)
ꢀ Chip size 2.9 mm x 1.25 mm
Absolute
Maximum
Ratings
Parameter
Symbol
Value
Unit
Positive DC voltage (+4 V Typical)
Negative DC voltage
Simultaneous (Vd - Vg)
Vd
Vg
Vdg
ID
+6
-2
8
75
Volts
Volts
Volts
mA
Positive DC current
RF Input Power (from 50 Ω source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(Channel to Backside)
PIN
TC
Tstg
RJC
+6
dBm
°C
°C
-30 to +85
-55 to +125
169
°C/W
Electrical
Parameter
Min
37
Typ
Max Unit
Parameter
Power Output Saturated
Drain Current at
Pin=-20 dBm
Drain Current at
1dB Compression
Input Return Loss
(Pin=-15 dBm)
Output Return Loss
(Pin=-15 dBm)
Min
Typ
15
Max Unit
Characteristics
Frequency Range
Gate Supply Voltage (Vg)1
Noise Figure
Gain Small Signal at
Pin=-20 dBm
Gain Variation vs.
Frequency
Gain at 1dB Compression
40
GHz
V
dBm
(At 25°C),
-0.5
2.7
50 Ω system,
Vd=+4 V,
Quiescent Current
Idq=50 mA
50
55
12
mA
mA
dB
4.0
dB
22
dB
1.5
21
dB
dB
13
23
dB
dBm
Power Output at 1dB
Compression
OIP3
13.5
dBm
Note:
1. Typical range of negative gate voltage is -0.9 to -0.1 V to set typical Idq of 50 mA.
Characteristic performance data and specifications are subject to change without notice.
www.raytheon.com/micro
Raytheon RF Components
362 Lowell Street
Revised March 14 2001
Page 1
Andover, MA 01810