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RMWL38001 PDF预览

RMWL38001

更新时间: 2024-10-01 21:55:43
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其他 - ETC 放大器
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描述
37-40 GHz Low Noise Amplifier MMIC

RMWL38001 数据手册

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RMWL38001  
37-40 GHz Low Noise Amplifier MMIC  
PRODUCT INFORMATION  
Description  
Features  
The RMWL38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Low Noise Amplifier for use in  
point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In  
conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz  
transmit/receive chipset. The RMWL38001 utilizes Raytheon’s 0.25µm power PHEMT process and is sufficiently  
versatile to serve in a variety of low noise amplifier applications.  
4 mil substrate  
Noise figure 2.7 dB (typ.)  
Small-signal gain 22 dB (typ.)  
1dB compressed Pout 13.5 dBm (typ.)  
Chip size 2.9 mm x 1.25 mm  
Absolute  
Maximum  
Ratings  
Parameter  
Symbol  
Value  
Unit  
Positive DC voltage (+4 V Typical)  
Negative DC voltage  
Simultaneous (Vd - Vg)  
Vd  
Vg  
Vdg  
ID  
+6  
-2  
8
75  
Volts  
Volts  
Volts  
mA  
Positive DC current  
RF Input Power (from 50 source)  
Operating Baseplate Temperature  
Storage Temperature Range  
Thermal Resistance  
(Channel to Backside)  
PIN  
TC  
Tstg  
RJC  
+6  
dBm  
°C  
°C  
-30 to +85  
-55 to +125  
169  
°C/W  
Electrical  
Parameter  
Min  
37  
Typ  
Max Unit  
Parameter  
Power Output Saturated  
Drain Current at  
Pin=-20 dBm  
Drain Current at  
1dB Compression  
Input Return Loss  
(Pin=-15 dBm)  
Output Return Loss  
(Pin=-15 dBm)  
Min  
Typ  
15  
Max Unit  
Characteristics  
Frequency Range  
Gate Supply Voltage (Vg)1  
Noise Figure  
Gain Small Signal at  
Pin=-20 dBm  
Gain Variation vs.  
Frequency  
Gain at 1dB Compression  
40  
GHz  
V
dBm  
(At 25°C),  
-0.5  
2.7  
50 system,  
Vd=+4 V,  
Quiescent Current  
Idq=50 mA  
50  
55  
12  
mA  
mA  
dB  
4.0  
dB  
22  
dB  
1.5  
21  
dB  
dB  
13  
23  
dB  
dBm  
Power Output at 1dB  
Compression  
OIP3  
13.5  
dBm  
Note:  
1. Typical range of negative gate voltage is -0.9 to -0.1 V to set typical Idq of 50 mA.  
Characteristic performance data and specifications are subject to change without notice.  
www.raytheon.com/micro  
Raytheon RF Components  
362 Lowell Street  
Revised March 14 2001  
Page 1  
Andover, MA 01810  

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