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RMWP26001 PDF预览

RMWP26001

更新时间: 2024-10-01 21:53:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器功率放大器
页数 文件大小 规格书
8页 386K
描述
24-26.5 GHz Power Amplifier MMIC

RMWP26001 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:DIE OR CHIP
Reach Compliance Code:compliant风险等级:5.8
特性阻抗:50 Ω构造:COMPONENT
增益:20 dB最大输入功率 (CW):8 dBm
功能数量:1最大工作频率:26500 MHz
最小工作频率:24000 MHz最高工作温度:85 °C
最低工作温度:-30 °C封装等效代码:DIE OR CHIP
电源:4 V射频/微波设备类型:WIDE BAND MEDIUM POWER
子类别:RF/Microwave Amplifiers技术:GAAS
Base Number Matches:1

RMWP26001 数据手册

 浏览型号RMWP26001的Datasheet PDF文件第2页浏览型号RMWP26001的Datasheet PDF文件第3页浏览型号RMWP26001的Datasheet PDF文件第4页浏览型号RMWP26001的Datasheet PDF文件第5页浏览型号RMWP26001的Datasheet PDF文件第6页浏览型号RMWP26001的Datasheet PDF文件第7页 
June 2004  
RMWP26001  
24–26.5 GHz Power Amplifier MMIC  
General Description  
Features  
The RMWP26001 is a 4-stage GaAs MMIC amplifier  
designed as a 24 to 26.5 GHz Power Amplifier for use in  
point to point and point to multi-point radios, and various  
communications applications. In conjunction with other  
Fairchild Semiconductor amplifiers, multipliers and mixers  
it forms part of a complete 26 GHz transmit/receive chipset.  
The RMWP26001 utilizes our 0.25µm power PHEMT  
process and is sufficiently versatile to serve in a variety of  
power amplifier applications.  
• 4mil substrate  
• Small-signal gain 23dB (typ.)  
• 1dB compressed Pout 24dBm (typ.)  
• Chip size 2.85mm x 1.2mm  
Device  
Absolute Ratings  
Symbol  
Parameter  
Positive DC Voltage (+4V Typical)  
Negative DC Voltage  
Ratings  
Units  
V
Vd  
Vg  
+6  
-2  
8
V
Vdg  
Simultaneous (Vd–Vg)  
V
I
Positive DC Current  
531  
mA  
dBm  
°C  
D
P
RF Input Power (from 50source)  
Operating Baseplate Temperature  
Storage Temperature Range  
Thermal Resistance (Channel to Backside)  
+8  
IN  
T
T
-30 to +85  
-55 to +125  
41.5  
C
°C  
STG  
R
°C/W  
JC  
©2004 Fairchild Semiconductor Corporation  
RMWP26001 Rev. C  

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