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RMWM26001

更新时间： 2024-10-01 23:32:59
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RMWM26001 数据手册

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RMWM26001  
26 GHz Mixer MMIC  
PRODUCT INFORMATION  
Description The RMWM26001 is a 26 GHz Mixer designed to be used in point to point radios, point to multi-point  
communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers,  
multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWM26001 is a  
GaAs MMIC diode mixer utilizing Raytheon’s 0.25µm power PHEMT process. The MMIC can be used as both an  
Upconverter and a Downconverter and is sufficiently versatile to serve in a variety of mixer applications.  
Features  
‹ 4 mil substrate  
‹ Conversion loss 7.5 dB (Upconverter)  
‹ Conversion loss 8.5 dB (Downconverter)  
‹ No DC bias required  
‹ Chip size 1.95 mm x 1.5 mm  
Absolute  
Maximum  
Ratings  
Parameter  
Symbol  
Value  
Units  
RF Input Power (from 50 Ω source)  
Operating Baseplate Temperature  
Storage Temperature Range  
PIN  
TC  
Tstg  
+25  
-30 to +85  
-55 to +125  
dBm  
°C  
°C  
Electrical  
Parameter  
RF Frequency Range  
LO Frequency Range  
IF Frequency Range  
(Up-Conv)  
IF Frequency Range  
(Down-Conv)  
LO Drive Power  
Up Conversion Loss  
Down Conversion Loss1  
Min  
21  
Typ  
Max Unit  
26.5 GHz  
GHz  
Parameter  
Min  
Typ  
Max Unit  
Characteristics  
RF Port Return Loss  
LO Port Return Loss  
IF Port Return Loss  
LO to RF Isolation  
LO to IF Isolation  
Input P1dB at IF Port  
(Up-Conv)  
Input P1dB at RF Port  
(Down-Conv)  
12  
10  
8
20  
35  
dB  
dB  
dB  
dB  
dB  
(At 25°C),  
50 Ω system,  
LO = +12 dBm  
17 - 24.1  
4.02 - 4.12  
GHz  
2.552 - 2.602  
GHz  
12  
7.5  
8.5  
16  
10  
dBm  
dB  
dB  
8
9
dBm  
dBm  
Conversion Loss  
Variation vs Freq.  
2
dB  
Application CAUTION: THIS IS AN ESD SENSITIVE DEVICE.  
Information  
Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal  
conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat,  
plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.  
Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for  
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.  
These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination  
of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including  
the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent  
static discharges through the device.  
Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical  
allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012” long corresponding  
to a typically 2 mil between the chip and the substrate material.  
Note:  
1. Device 100% RF tested as downconverter only. LO drive = +12 dBm, RF Pin = -10 dBm, IF = 2.6 GHz.  
Characteristic performance data and specifications are subject to change without notice.  
www.raytheon.com/micro  
Raytheon RF Components  
362 Lowell Street  
Revised March 14, 2001  
Page 1  
Andover, MA 01810  
123456

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