Datasheet > RMWB33001

RMWB33001

更新时间： 2024-10-01 21:53:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		缓冲放大器
页数	文件大小	规格书
6页	235K
描述
33 GHz Buffer Amplifier MMIC

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RMWB33001 数据手册

June 2004

RMWB33001

33 GHz Buffer Amplifier MMIC

General Description

Features

The RMWB33001 is a 4-stage GaAs MMIC amplifier

designed as a 33 GHz Buffer Amplifier for use in point to

point and point to multi-point radios, and various communi-

cations applications. In conjunction with other Fairchild RF

amplifiers, multipliers and mixers it forms part of a complete

38 GHz transmit/receive chipset. The RMWB33001 utilizes

our 0.25µm power PHEMT process and is sufficiently

versatile to serve in a variety of medium power amplifier

applications.

• 4 mil Substrate

• Small-signal Gain 24dB (typ.)

• Saturated Power Out 19dBm (typ.)

• Voltage Detector Included to Monitor Pout

• Chip size 3.2mm x 1.2mm

Device

Absolute Ratings

Symbol

Parameter

Positive DC Voltage (+4V Typical)

Negative DC Voltage

Ratings

Units

-2

Vdg

Simultaneous (Vd–Vg)

Positive DC Current

173

dBm

°C

RF Input Power (from 50Ω source)

Operating Baseplate Temperature

Storage Temperature Range

Thermal Resistance (Channel to Backside)

-30 to +85

-55 to +125

130

°C

STG

°C/W

RMWB33001 Rev. C

12 3 4 5 6

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