Datasheet > RMWD38001

RMWD38001

更新时间： 2024-10-02 21:03:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	372K
描述
Wide Band Low Power Amplifier, 37000MHz Min, 40000MHz Max, 1 Func, GAAS, 3 X 1.20 MM, 1.20 MM HEIGHT, DIE

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

RMWD38001 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	DIE OR CHIP	Reach Compliance Code：	unknown
风险等级：	5.8	Base Number Matches：	1

RMWD38001 数据手册

RMWD38001

37-40 GHz Driver Amplifier MMIC

PRODUCT INFORMATION

The RMWD38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Driver Amplifier for use in point to

point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction

with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 38 GHz

transmit/receive chipset. The RMWD38001 utilizes Fairchild Semiconductor's 0.25µm power PHEMT proceoss and

is sufficiently versatile to serve in a variety of driver amplifier applications.

Description

Features

ꢀ 4 mil substrate

ꢀ Small-signal gain 25 dB (typ.)

ꢀ 1dB compressed Pout 18 dBm (typ.)

ꢀ Voltage detector included to monitor Pout

ꢀ Chip size 3.0 mm x 1.2 mm

Absolute

Ratings

Parameter

Symbol

Value

Units

Positive DC voltage (+4 V Typical)

Negative DC voltage

Vdg

I_D

Volts

-2

Simultaneous (Vd - Vg)

Positive DC Current

173

RF Input Power (from 50 Ω source)

Operating Baseplate Temperature

Storage Temperature Range

P_IN

T_C

dBm

°C

-30 to +85

-55 to +125

126

°C

stg

Thermal Resistance

(Channel to Backside)

R_jc

°C/W

Electrical

Parameter

Frequency Range

Gate Supply Voltage (Vg)¹

Min

Typ

Max Unit

40 GHz

Parameter

Drain Current at Saturated:

Pin = -5.5 dBm

Min

Typ

Max Unit

Characteristics

(At 25 °C 50Ω

system, Vd=+4 V,

Quiescent Current

(Idq)= 105 mA

120

-0.4

Power Added Efficiency

(PAE): at P1 dB

Gain Small Signal at

Pin = -10 dBm

Input Return Loss

(Pin = -10 dBm)

Gain Variation vs Frequency

Gain at 1dB Compression

Output Return Loss

(Pin = -10 dBm)

Power Output at 1 dB

Compression

dBm

OIP3

Power Output Saturated:

Pin = -5.5 dBm

Noise Figure

15.5

Detector Voltage

(Pout = +17 dBm)

Drain Current at

Pin = -10 dBm

0.1

105

120

Drain Current at 1 dB

Compression

Note:

1. Typical range of gate voltage is -0.7 to -0.1 V to set Idq of 105 mA.

Characteristic performance data and specifications are subject to change without notice.

Revised March 14, 2001

Page 1

12 3 4 5 6 7 8

中文翻译

下载PDF

与RMWD38001相关器件

型号	品牌	获取价格	描述	数据表
RMWL38001	ETC	获取价格	37-40 GHz Low Noise Amplifier MMIC
RMWM26001	ETC	获取价格	Analog IC
RMWM38001	ETC	获取价格	Analog IC
RMWP23001	FAIRCHILD	获取价格	21-24 GHz Power Amplifier MMIC
RMWP26001	FAIRCHILD	获取价格	24-26.5 GHz Power Amplifier MMIC
RMWP38001	FAIRCHILD	获取价格	Wide Band Medium Power Amplifier, 37000MHz Min, 40000MHz Max, 1 Func, GAAS, 3.40 X 1.40 MM
RMWT04001	ETC	获取价格	Analog IC
RMWT11001	FAIRCHILD	获取价格	11-33 GHz Tripler MMIC
RMWV3216A	RENESAS	获取价格	32Mb Advanced LPSRAM (2M word × 16bit)
RMWV6416A	RENESAS	获取价格	64Mb Advanced LPSRAM (4M word × 16bit / 8M wo