Datasheet > RMP12N60TI

RMP12N60TI

更新时间： 2024-10-15 18:06:27

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	1742K
描述
Vdss (V) : 600 V;Id @ 25C (A) : 12.0 A;Rds-on (typ) (mOhms) : 520 mOhms;Total Gate Charge (nQ) typ : 42 nQ;Maximum Power Dissipation (W) : 225 W;Input Capacitance (Ciss) : 1480 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220F

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RMP12N60TI 数据手册

RMP12N60TI

RMP12N60T2

N-CHANNEL ENHANCEMENT MODE MOSFET

RMP12N60 is an N-channel enhancement mode MOSFET,which uses the self-aligned

planar process and improved terminal technology,reducing the conduction loss,

enhancing the avalanche energy.

600

0.70

FEATURES

• Low Crss

• Low gate charge

• Fast switching

• Improved ESD capability

• Improved dv/dt capability

• 100% avalanche energy test

APPLICATIONS

• High efficiency swith mode power supplies

• Electronic lamp ballasts

• UPS

RMP12N60TI

TO-220F

TO-220

12N60

RMP12N60

12N60

2018-11 /27

REV:O

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
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