Datasheet > RMP3N90TI

RMP3N90TI

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
6页	1549K
描述
Vdss (V) : 900 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 2500 mOhms;Total Gate Charge (nQ) typ : 19 nQ;Maximum Power Dissipation (W) : 38 W;Input Capacitance (Ciss) : 850 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220F

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中文翻译

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RMP3N90TI 数据手册

RMP3N90TI

N-Channel Enhancement Mosfet

Feature

⚫

900V,3 A

RDS(ON) ≤ 3.5 Ω @ VGS=10V, TYP=2.8Ω

⚫

Fast Switching

Low ON Resistance(Rdson≤3.5Ω)

100% Single Pulse avalanche energy Test

Rohs compliant

Application

⚫

Switch Mode Power Supply (SMPS)

Electronic Ballast

Electronic Transformer

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity (PCS)

3N90F

RMP3N90TI

TO-220F

1000

ABSOLUTE MAXIMUM RATINGS (T_J=25℃ unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Value

900

Unit

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous Drain Current (T_C=25℃)

Continuous Drain Current (T_C=100℃)

Pulsed Drain Current⁽¹⁾

I_D

1.9

I_DM

Power Dissipation

P_D

Single Pulse Avalanche Energy⁽²⁾

Junction to case⁽³⁾

E_AS

℃/W

℃

R_θJC

R_θJA

T_J

3.25

62.5

150

Junction to Ambient⁽³⁾

Junction Temperature

Storage Temperature

T_STG

-55~ +150

℃

2024-04/59

REV:O

12 3 4 5 6

中文翻译

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RMP4N65T2	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 2100 mOhms;Total Gate Charge
RMP4N65TI	RECTRON	获取价格	Vdss (V) : 650 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 2100 mOhms;Total Gate Charge
RMP4N70IP	RECTRON	获取价格	Vdss (V) : 700 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 2500 mOhms;Total Gate Charge
RMP4N70LD	RECTRON	获取价格	Vdss (V) : 700 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 2500 mOhms;Total Gate Charge