5秒后页面跳转
RM2Z PDF预览

RM2Z

更新时间: 2024-09-14 22:30:43
品牌 Logo 应用领域
EIC 整流二极管
页数 文件大小 规格书
2页 43K
描述
SILICON RECTIFIER DIODES

RM2Z 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.74
其他特性:HIGH RELIABILITY, LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.91 VJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1.2 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:200 V最大反向电流:10 µA
子类别:Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

RM2Z 数据手册

 浏览型号RM2Z的Datasheet PDF文件第2页 
SILICON RECTIFIER DIODES  
RM2 - RM2Z  
D2A  
PRV : 200 - 1000 Volts  
Io : 1.2 Amperes  
FEATURES :  
1.00 (25.4)  
* High current capability  
* High surge current capability  
* High reliability  
0.161 (4.1)  
MIN.  
0.154 (3.9)  
* Low reverse current  
* Low forward voltage drop  
0.284 (7.2)  
0.268 (6.8)  
1.00 (25.4)  
0.040 (1.02)  
MIN.  
0.0385 (0.98)  
MECHANICAL DATA :  
* Case : D2A Molded plastic  
* Epoxy : UL94V-O rate flame retardant  
* Lead : Axial lead solderable per MIL-STD-202,  
Method 208 guaranteed  
* Polarity : Color band denotes cathode end  
* Mounting position : Any  
Dimensions in inches and ( millimeters )  
* Weight : 0.645 gram  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 C ambient temperature unless otherw ise specified.  
°
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
RATING  
SYMBOL RM2Z  
RM2  
RM2A  
RM2B  
RM2C  
UNIT  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
Maximum DC Blocking Voltage  
Maximum Average Forward Current  
1000  
0.375"(9.5mm) Lead Length Ta = 70 C  
IF  
1.2  
Amps.  
°
Peak Forward Surge Current  
8.3ms Single half sine wave Superimposed  
on rated load (JEDEC Method)  
IFSM  
VF  
100  
Amps.  
Volts  
Maximum Forward Voltage at IF = 1.5 Amps.  
0.91  
Maximum DC Reverse Current  
at rated DC Blocking Voltage  
Ta = 25 C  
IR  
10  
A
m
°
Ta = 100 C  
IR(H)  
CJ  
50  
30  
A
m
°
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance (Note2)  
Junction Temperature Range  
pF  
R JA  
q
50  
C/W  
°
T
J
- 65 to + 175  
- 65 to + 175  
C
°
Storage Temperature Range  
TSTG  
C
°
Notes :  
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC  
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.  
UPDATE : MAY 27, 1998  

与RM2Z相关器件

型号 品牌 获取价格 描述 数据表
RM2ZV SANKEN

获取价格

暂无描述
RM2ZV1 SANKEN

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
RM2ZV3 SANKEN

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
RM2ZV4 SANKEN

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
RM2ZVO SANKEN

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
RM2ZW SANKEN

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
RM2ZWK SANKEN

获取价格

暂无描述
RM2ZWS SANKEN

获取价格

Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,
RM3 SANKEN

获取价格

Rectifier Diodes
RM3 EIC

获取价格

SILICON RECTIFIER DIODES