RM3

更新时间： 2024-11-06 09:46:55

品牌	Logo	应用领域
EIC		整流二极管
页数	文件大小	规格书
2页	43K
描述
SILICON RECTIFIER DIODES

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中文翻译

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数据手册

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RM3 数据手册

SILICON RECTIFIER DIODES

RM3 - RM3B

DO - 201AD

PRV : 400 - 800 Volts

Io : 2.5 Ampere

FEATURES :

* High current capability

* High surge current capability

* High reliability

1.00 (25.4)

0.21 (5.33)

MIN.

0.19 (4.83)

* Low reverse current

* Low forward voltage drop

* Pb / RoHS Free

0.375 (9.53)

0.285 (7.24)

MECHANICAL DATA :

1.00 (25.4)

* Case : DO-201AD Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

0.052 (1.32)

MIN.

0.048 (1.22)

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 1.21 grams

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

Maximum Reverse Voltage

SYMBOL

VRM

RM3

400

RM3A

600

RM3B

800

UNIT

Maximum Peak Reverse Surge Voltage

Maximum Average Forward Current

VRSM

400

600

800

IF(AV)

2.5

Maximum Peak Forward Surge Current

Half-cycle Sine wave, 50 Hz, Single Shot

IFSM

150

Maximum Forward Voltage at IF = 2.5 A

0.95

Maximum Reverse Current

at VR = VRmax.

Ta = 25 °C

Ta = 150 °C

°C

IR(H)

100

Junction Temperature Range

Storage Temperature Range

- 40 to + 150

TSTG

Page 1 of 2

Rev. 02 : March 25, 2005

中文翻译

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