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RGP30J-AP PDF预览

RGP30J-AP

更新时间: 2024-09-15 13:12:55
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 84K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD

RGP30J-AP 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.18Is Samacsys:N
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
最大非重复峰值正向电流:125 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
最大重复峰值反向电压:600 V最大反向电流:5 µA
最大反向恢复时间:0.25 µs表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

RGP30J-AP 数据手册

 浏览型号RGP30J-AP的Datasheet PDF文件第2页浏览型号RGP30J-AP的Datasheet PDF文件第3页 
M C C  
RGP30A  
THRU  
RGP30M  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
21201 Itasca Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
3.0 Amp Glass  
Passivated Junction  
Fast Recovery  
Rectifiers  
Features  
·
·
·
High temperature metallurgically bonded construction  
Glass passivated cavity-free junction  
3.0 amperes operation at T =55OC and with no  
A
thermal runaway.  
·
·
Typical I less than 0.2uA  
Fast switching for high efficiency  
R
50 to 1000 Volts  
Maximum Ratings  
DO-201AD  
·
·
·
Operating Temperature: -55OC to +150OC  
Storage Temperature: -55OC to +150OC  
Typical Thermal Resistance: 25OC/W Junction toAmbient  
Maximum  
Recurrent  
Maximum DC  
Blocking  
MCC  
Maximum  
D
Part Number  
Peak Reverse  
Voltage  
RMS Voltage  
Voltage  
RGP30A  
RGP30B  
RGP30D  
RGP30G  
RGP30J  
RGP30K  
RGP30M  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
A
140V  
280V  
420V  
560V  
700V  
Cathode  
Mark  
B
D
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Maximum Average  
Forward Current  
Peak Forward Surge  
Current  
IF(AV)  
3.0 A  
T = 55OC  
A
C
IFSM  
125A  
8.3ms, half sine  
DIMENSIONS  
Maximum  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
INCHES  
MIN  
---  
MM  
MIN  
VF  
1.3V  
I
= 3.0A;  
FM  
DIM  
A
MAX  
.370  
.250  
.052  
---  
MAX  
9.50  
6.40  
1.30  
---  
NOTE  
---  
---  
1.20  
25.40  
B
C
---  
.048  
1.000  
IR  
5.0uA  
T =25OC  
A
D
100uA T =150OC  
A
Maximum Reverse  
Recovery Time  
RGP30A-30G  
RGP30J  
RGP30K-30M  
Typical Junction  
Capacitance  
T =25OC  
J
Trr  
CJ  
150nS I =0.5A  
F
250nS IR=1.0A  
500nS IRR=0.25A  
60pF  
Measured at  
1.0MHz, VR=4.0V  
www.mccsemi.com  

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