Datasheet > RFUS10TF4S

RFUS10TF4S

更新时间： 2024-02-28 03:26:20

品牌	Logo	应用领域
罗姆 - ROHM		二极管超快速恢复二极管
页数	文件大小	规格书
5页	1135K
描述
Super Fast Recovery Diode

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中文翻译

获取价格

数据手册

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RFUS10TF4S 数据手册

Data Sheet

Super Fast Recovery Diode

RFUS10TF4S

lSeries

lDimensions (Unit : mm)

lStructure

Standard Fast Recovery

lApplications

General rectification

RFUS10

TF4S

lFeatures

①

②

1)Single type.(TO-220)

2)High switching speed

lConstruction

Silicon epitaxial planer

ROHM : TO220NFM

①

②

Manufacture Year

Manufacture Week

lAbsolute maximum ratings (Tc=25C)

Parameter

Conditions

Symbol

V_RM

V_R

Limits

430

Unit

Repetitive peak reverse voltage

Reverse voltage

Duty≤0.5

60Hz half sin wave, Resistance load,

Average rectified forward current

Tc=82°C

60Hz half sin wave, Non-repetitive

one cycle peak value, Tj=25°C

I_FSM

Forward current surge peak

Junction temperature

Storage temperature

150

C

Tstg

-55 to +150

lElectrical characteristics (Tj=25C)

Parameter

Forward voltage

Conditions

I_F=10A

Symbol

V_F

Min.

－

Typ.

1.45

0.05

Max.

1.7

Unit

V_R=430V

Reverse current

I_R

－

μA

I_F=0.5A,I_R=1A,Irr=0.25×I_R

junction to case

Reverse recovery time

Thermal resistance

trr

－

Rth(j-c)

－

°C/W

www.rohm.com

2011.10 - Rev.A

1/4

12 3 4 5

中文翻译

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