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RFUS20NS6S_11 PDF预览

RFUS20NS6S_11

更新时间: 2024-01-12 06:59:02
品牌 Logo 应用领域
罗姆 - ROHM 二极管超快速恢复二极管
页数 文件大小 规格书
4页 1001K
描述
Super Fast Recovery Diode

RFUS20NS6S_11 数据手册

 浏览型号RFUS20NS6S_11的Datasheet PDF文件第2页浏览型号RFUS20NS6S_11的Datasheet PDF文件第3页浏览型号RFUS20NS6S_11的Datasheet PDF文件第4页 
Data Sheet  
Super Fast Recovery Diode  
RFUS20NS6S  
Series  
Dimensions(Unit : mm)  
Land size figure(Unit : mm)  
Ultra Fast Recovery  
Applications  
General rectification  
Features  
1)Ultra low switching loss  
2)High current overload capacity  
3)Cathode common single type  
Structure  
Construction  
Silicon epitaxial planer  
Taping dimensions(Unit : mm)  
Absolute maximum ratings(Tc=25C)  
Parameter  
Conditions  
Limits  
Unit  
Symbol  
VRM  
Repetitive peak reverse voltage  
Reverse voltage  
600  
600  
V
V
Duty0.5  
Direct voltage  
VR  
60Hz half sin wave resistive load ,  
1/2 Io per diode  
Average rectified forward current  
Forward current surge peak  
Io  
20  
A
A
Tc=36C  
60Hz half sin wave, Non-repetitive  
IFSM  
100  
one cycle peak value, Tj=25C  
Junction temperature  
Storage temperature  
150  
Tj  
C  
C  
55 to 150  
Tstg  
Electrical characteristics(Tj=25C)  
Parameter  
Conditions  
IF=20A  
Min.  
Typ.  
2.4  
0.05  
23  
Max.  
2.8  
10  
Symbol  
VF  
Unit  
V
-
-
-
-
Forward voltage  
Reverse current  
VR=600V  
IR  
μA  
Reverse recovery time  
Thermal resistance  
IF=0.5A,IR=1A,Irr=0.25×IR  
junction to case  
35  
trr  
ns  
-
2
Rth(j-c)  
C/W  
www.rohm.com  
2011.06 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/3  

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