Datasheet > RD38F1010C0ZTL0

RD38F1010C0ZTL0

更新时间： 2024-02-22 17:36:41

品牌	Logo	应用领域
英特尔 - INTEL		闪存
页数	文件大小	规格书
70页	1167K
描述
3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye

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RD38F1010C0ZTL0 数据手册

3 Volt Intel^®Advanced+ Boot Block

Flash Memory (C3) Stacked-Chip Scale

Package Family

Datasheet

Product Features

■ Flash Memory Plus SRAM

■ Advanced+ Boot Block Flash Memory

—70 ns Access Time at 2.7 V

—Reduces Memory Board Space

Required, Simplifying PCB Design

Complexity

—Instant, Individual Block Locking

—128 bit Protection Register

—12 V Production Programming

—Ultra Fast Program and Erase Suspend

—Extended Temperature –25 °C to +85 °C

■ Blocking Architecture

■ Stacked-Chip Scale Package (Stacked-

CSP) Technology

—Smallest Memory Subsystem Footprint

—Area : 8 x 10 mm for 16Mbit (0.13 µm)

Flash + 2Mbit or 4Mbit SRAM

—Block Sizes for Code + Data Storage

—4-Kword Parameter Blocks (for data)

—64-Kbyte Main Blocks (for code)

—100,000 Erase Cycles per Block

■ Low Power Operation

—Async Read Current: 9 mA (Flash)

—Standby Current: 7 µA (Flash)

—Automatic Power Saving Mode

■ Flash Technologies

—Area : 8 x 12 mm for 32Mbit (0.13 µm)

Flash + 4Mbit or 8Mbit SRAM

—Height : 1.20 mm for 16Mbit (0.13 µm)

Flash + 2Mbit or 4Mbit SRAM and

32Mbit (0.13um) Flash + 8Mbit SRAM

—Height : 1.40 mm for 32Mbit (0.13 µm)

Flash + 4Mbit SRAM

—This Family also includes 0.25 µm and

0.18 µm technologies

■ Advanced SRAM Technology

—70 ns Access Time

—0.25 µm ETOX™ VI, 0.18 µm ETOX™

VII and 0.13 µm ETOX™ VIII Flash

Technologies

—Low Power Operation

—Low Voltage Data Retention Mode

■ Intel^®Flash Data Integrator (FDI)

—28F160xC3, 28F320xC3

Software

—Real-Time Data Storage and Code

Execution in the Same Memory Device

—Full Flash File Manager Capability

The 3 Volt Intel^®Advanced+ Boot Block Flash Memory (C3) Stacked-Chip Scale Package

(Stacked-CSP) device delivers a feature-rich solution for low-power applications. The C3

Stacked-CSP memory device incorporates flash memory and static RAM in one package with

low voltage capability to achieve the smallest system memory solution form-factor together with

high-speed, low-power operations. The C3 Stacked-CSP memory device offers a protection

the Intel^®Flash Data Integrator (Intel^®FDI) software, the C3 Stacked-CSP memory device

provides a cost-effective, flexible, code plus data storage solution.

Notice: This document contains information on new products in production. The specifications

are subject to change without notice. Verify with your local Intel sales office that you have the lat-

est datasheet before finalizing a design.

252636-001

February, 2003

12 3 4 5 6 7...70

中文翻译

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RD38F1010C0ZTL0 替代型号

型号	品牌	替代类型	描述	数据表
M36W832TE70ZA6	NUMONYX	功能相似	Memory Circuit, 2MX16, CMOS, PBGA66, 12 X 8 MM, 0.80 MM PITCH, LFBGA-66
M36W832BE85ZA1T	NUMONYX	功能相似	Memory Circuit, 2MX16, CMOS, PBGA66, 12 X 8 MM, 0.80 MM PITCH, LFBGA-66
RD28F1604C3BD70	INTEL	功能相似	3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye

与RD38F1010C0ZTL0相关器件

型号	品牌	获取价格	描述	数据表
RD38F1010W0YBQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F1010W0YDQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F1010W0YTQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F1010W0ZBQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F1010W0ZDQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F1010W0ZTQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F102000YBQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F102000YDQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F102000YTQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F102000ZBQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)

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