Datasheet > RD38F1020WYBQ1

RD38F1020WYBQ1

更新时间： 2023-02-26 13:34:42

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
23页	364K
描述
Memory Circuit, 2MX16, CMOS, PBGA88, 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, SCSP-88

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RD38F1020WYBQ1 数据手册

Intel^®Wireless Flash Memory (W18 SCSP)

32-Mbit W18 + 8-Mbit SRAM (38F1020W0YTQ1, 38F1020W0YBQ1)

Datasheet

Product Features

■ Flash Architecture

■ Flash Automation Suspend Operations

— Erase Suspend to Program or Read

— Program Suspend to Read

— Flexible, Multi-Partition, Dual-Operation:

Read-While-Write / Read-While-Erase

— 8 Partitions, 4 Mbits each

— 5 µs (typ) Program/Erase Suspend Latency

— 7 Main Partitions, 8 Main Blocks each

— 1 Parameter Partition, 8 Parameter + 7 Main

Blocks

— 32-KWord Main Blocks, 4-KWord

Parameter Blocks

■ Flash Software

— Intel^®Flash Data Integrator (Intel^®FDI)

Optimized

— Common Flash Interface (CFI)

■ SCSP Architecture

— Top and Bottom Parameter Configuration

— 32-Mbit Flash die + 8-Mbit SRAM die

— Reduces Board Space Requirement

— Simplifies PCB Design Complexity

— Easy Migration to Future SCSP Devices

■ Flash Performance

— 65 ns Initial Access Speed

— 25 ns Page-Mode Read Speed; 4-Word Page

— 14 ns Burst-Mode Read Speed

— 4-, 8-, 16- or Continuous-Word Burst Modes

— Burst- and Page-Mode Reads in Parameter

and Main Partitions

■ SCSP Voltage

— 1.7 V to 1.95 V V /V

and S-V

CC CCQ

■ SCSP Packaging

— 0.8 mm Ball-Pitch Intel^®SCSP

— Burst Suspend

— Burst-Mode Reads can Traverse Partition

— Area: 8x10 mm, Height: 1.2 mm max

— 88-Ball (8 x 10 Matrix): 80 Active Balls with

2 Support Balls at Each Corner

Boundaries

— Programmable WAIT Polarity

— Enhanced Factory Programming: 3.1 µs/

Word (typ)

■ SRAM Architecture and Performance

— 70 ns Access Time

■ Flash Data Protection

— Absolute Protection with VPP and WP#

— Individual Dynamic Zero-Latency Block

Locking

— Low-Voltage Data Retention Mode

■ Flash Quality and Reliability

— Extended Temperature: –25 °C to +85 °C

— Minimum 100,000 Block Erase Cycles

— Intel^®0.13 µm ETOX^TMVIII Process

Technology

— Individual Block Lock-Down

— Erase/Program Lockout during Power

Transitions

■ Flash Protection Register

— 64 Unique Device Identifier Bits

— 64 User-Programmable OTP Bits

This datasheet describes the key features of the Intel^®Wireless Flash Memory (W18 SCSP) device.

This device stacks a wireless flash memory device (W18) in combination with a low-power 8-Mbit

SRAM device, into a versatile and compact Stacked Chip Scale Package (SCSP). The 32-Mbit W18

+ 8-Mbit SRAM combination device described in this document provides a solution for

high-performance, low-power, board-constrained memory applications. . Refer to the latest revision

of the Intel^®Wireless Flash Memory (W18) Datasheet (order number 290701) for flash device

details not provided in this document.

Notice: This document contains information available at the time of its release. The

specifications are subject to change without notice. Verify with your local Intel sales office that

you have the latest datasheet before finalizing a design.

Order Number: 252635, Revision: 003-

28 Jun 2005

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与RD38F1020WYBQ1相关器件

型号	品牌	获取价格	描述	数据表
RD38F1020WYTQ1	INTEL	获取价格	Memory Circuit, 2MX16, CMOS, PBGA88, 8 X 10 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, SCSP-88
RD38F103000YBQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F103000YDQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F103000YTQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F103000ZBQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F103000ZDQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F103000ZTQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F1030W0YBQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F1030W0YDQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)
RD38F1030W0YTQ0	NUMONYX	获取价格	Wireless Flash Memory (W18/W30 SCSP)

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