Datasheet > RD28F1608C3T110

RD28F1608C3T110

更新时间： 2024-01-21 12:04:55

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
66页	605K
描述
Memory IC

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RD28F1608C3T110 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

RD28F1608C3T110 数据手册

3 Volt Advanced+ Stacked Chip Scale

Package Memory

28F1602C3, 28F1604C3, 28F3204C3, 28F3208C3

Preliminary Datasheet

Product Features

■ Flash Memory Plus SRAM

■ Advanced+ Boot Block Flash Memory

—90 ns 16-Mb Access Time at 2.7 V

—100 ns 32-Mb Access Time at 2.7 V

—Reduces Memory Board Space

Required, Simplifying PCB Design

Complexity

—110 ns 32-Mb Access Time at 2.7 V with

8-Mbit SRAM

—Instant, Individual Block Locking

—128-bit Protection Register

■ Stacked Chip Scale Package Technology

—Smallest Memory Subsystem Footprint

—16-Mbit Flash + 2-Mbit SRAM:

Area: 8 mm by 10 mm, Height: 1.4 mm

—12 V Production Programming

—Ultra Fast Program and Erase Suspend

—Extended Temperature –25 °C to +85 °C

■ Blocking Architecture

—Block Sizes for Code + Data Storage

—4-Kword Parameter Blocks (for data)

—64-Kbyte Main Blocks (for code)

—100,000 Erase Cycles per Block

■ Low Power Operation

—32-Mbit Flash + 8-Mbit SRAM:

Area: 8 mm by 14mm, Height: 1.4 mm

—32-Mbit Flash + 4-Mbit SRAM,

16-Mbit Flash + 4-Mbit SRAM:

Area: 8 mm by 12 mm, Height: 1.4 mm

■ Advanced SRAM Technology

—70 ns Access Time

—Low Power Operation

—Low Voltage Data Retention Mode

■ Flash Data Integrator (FDI) Software

—Async Read Current: 9 mA

—Real-Time Data Storage and Code

Execution in the Same Memory Device

—Full Flash File Manager Capability

—Standby Current: 10 µA

—Automatic Power Saving Mode

■ 0.25 µm ETOX™ VI Flash Technology

■ Industry Compatibility

—Sourcing Flexibility and Stability

The 3 Volt Advanced+ Stacked Chip Scale Package (Stacked-CSP) memory delivers a feature-

rich solution for low-power applications. Stacked-CSP memory devices incorporate flash

memory and static RAM in one package with low voltage capability to achieve the smallest

system memory solution form-factor together with high-speed, low-power operations. The flash

memory offers a protection register and flexible block locking to enable next generation security

capability. Combined with the Intel-developed Flash Data Integrator (FDI) software, the

Stacked-CSP memory provides you with a cost-effective, flexible, code plus data storage

solution.

Notice: This document contains preliminary information on new products in production. The

specifications are subject to change without notice. Verify with your local Intel sales office that

you have the latest datasheet before finalizing a design.

Order Number: 290666-007

February, 2001

12 3 4 5 6 7...66

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与RD28F1608C3T110相关器件

型号	品牌	获取价格	描述	数据表
RD28F1608C3T90	INTEL	获取价格	Memory IC
RD28F1608VCCB110	INTEL	获取价格	Memory IC
RD28F1608VPPB90	INTEL	获取价格	Memory IC
RD28F1608VPPT110	INTEL	获取价格	Memory IC
RD28F3202C3B100	INTEL	获取价格	Memory Circuit, 2MX16, CMOS, PBGA72, 8 X 12 MM, 1.40 MM HEIGHT, STACK, CSP-72
RD28F3202C3B110	INTEL	获取价格	Memory Circuit, 2MX16, CMOS, PBGA72, 8 X 12 MM, 1.40 MM HEIGHT, STACK, CSP-72
RD28F3202C3T100	INTEL	获取价格	Memory Circuit, 2MX16, CMOS, PBGA72, 8 X 12 MM, 1.40 MM HEIGHT, STACK, CSP-72
RD28F3202C3T110	INTEL	获取价格	Memory Circuit, 2MX16, CMOS, PBGA72, 8 X 12 MM, 1.40 MM HEIGHT, STACK, CSP-72
RD28F3202VCCB110	INTEL	获取价格	Memory IC
RD28F3202VCCT100	INTEL	获取价格	Memory IC

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