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RD28F3204W30B70

更新时间： 2024-02-13 17:31:30

品牌	Logo	应用领域
英特尔 - INTEL		闪存存储内存集成电路静态存储器无线
页数	文件大小	规格书
82页	688K
描述
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)

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技术参数
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RD28F3204W30B70 技术参数

生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	LFBGA,	针数：	80
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.83	其他特性：	SRAM IS CONFIGURED AS 256K X 16
JESD-30 代码：	R-PBGA-B80	长度：	14 mm
内存密度：	33554432 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	16	功能数量：	1
端子数量：	80	字数：	2097152 words
字数代码：	2000000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-25 °C
组织：	2MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	LFBGA	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY, LOW PROFILE, FINE PITCH	认证状态：	Not Qualified
座面最大高度：	1.4 mm	最大供电电压 (Vsup)：	1.9 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	OTHER	端子形式：	BALL
端子节距：	0.8 mm	端子位置：	BOTTOM
宽度：	8 mm	Base Number Matches：	1

RD28F3204W30B70 数据手册

1.8 Volt Intel^®Wireless Flash Memory

with 3 Volt I/O and SRAM (W30)

28F6408W30, 28F3204W30, 28F320W30, 28F640W30

Preliminary Datasheet

Product Features

■ Flash Performance

■ Flash Architecture

— 70 ns Initial Access Speed

— 25 ns Page-Mode Read Speed

— 20 ns Burst-Mode Read Speed

— Burst and Page Mode in All Blocks and

across All Partition Boundaries

— Enhanced Factory Programming:

3.5 µs per Word Program Time

— Programmable WAIT Signal Polarity

■ Flash Power

— Multiple 4-Mbit Partitions

— Dual Operation: RWW or RWE

— Parameter Block Size = 4-Kword

— Main block size = 32-Kword

— Top and Bottom Parameter Devices

■ Flash Security

— 128-bit Protection Register: 64 Unique Device

Identifier Bits; 64 User OTP Protection

— Absolute Write Protection with V at Ground

— Program and Erase Lockout during Power

Transitions

— V = 1.70 V – 1.90 V

CCQ

— V

= 2.20 V – 3.30 V

— Standby Current = 6 µA (typ.)

— Read Current = 7 mA

— Individual and Instantaneous Block Locking/

Unlocking with Lock-Down

(4 word burst, typ.)

■ Flash Software

■ SRAM

— 5/9 µs (typ.) Program/Erase Suspend Latency

Time

— 70 ns Access Speed

— 16-bit Data Bus

— Intel^®Flash Data Integrator (FDI) and

Common Flash Interface (CFI) Compatible

■ Quality and Reliability

— Operating Temperature:

–25 °C to +85 °C

— Low Voltage Data Retention

— S-V = 2.20 V – 3.30 V

■ Density and Packaging

— 32-Mbit Discrete in VF BGA Package

— 64-Mbit Discrete in µBGA* Package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch in

µBGA* and VF BGA Packages

— 32/4-, 64/8- and 128/TBD- Mbit (Flash +

SRAM) in a 80-Ball Stacked-CSP Package (14

mm x 8 mm)

— 100K Minimum Erase Cycles

— 0.18 µm ETOX™ VII Process

— 16-bit Data Bus

The 1.8 Volt Intel^®Wireless Flash Memory with 3 Volt I/O combines state-of-the-art Intel^®Flash technology with

low power SRAM to provide the most versatile and compact memory solution for high performance, low power,

board constraint memory applications.

The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O offers a multi-partition, dual-operation flash

architecture that enables the device to read from one partition while programming or erasing in another partition.

This Read-While-Write or Read-While-Erase capability makes it possible to achieve higher data throughput rates

as compared to single partition devices and it allows two processors to interleave code execution because

program and erase operations can now occur as background processes.

The 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O incorporates a new Enhanced Factory Programming

(EFP) mode to improve 12 V factory programming performance. This new feature helps eliminate manufacturing

bottlenecks associated with programming high density flash devices. Compare the EFP program time of 3.5 µs

per word to the standard factory program time of 8.0 µs per word and save significant factory programming time

for improved factory efficiency.

Additionally, the 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O includes block lock-down, programmable

WAIT signal polarity and is supported by an array of software tools. All these features make this product a perfect

solution for any demanding memory application.

Notice: This document contains preliminary information on new products in production. The

specifications are subject to change without notice. Verify with your local Intel sales office that

you have the latest datasheet before finalizing a design.

290702-002

March 2001

12 3 4 5 6 7...82

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与RD28F3204W30B70相关器件

型号	品牌	获取价格	描述	数据表
RD28F3204W30B85	INTEL	获取价格	1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30T70	INTEL	获取价格	1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3204W30T85	INTEL	获取价格	1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
RD28F3208C3B100	INTEL	获取价格	Memory IC
RD28F3208C3B70	INTEL	获取价格	3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F3208C3B90	INTEL	获取价格	3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F3208C3T100	INTEL	获取价格	Memory IC
RD28F3208C3T70	INTEL	获取价格	3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F3208C3T90	INTEL	获取价格	3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye
RD28F3208VCCT100	INTEL	获取价格	Memory IC

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